Expert Details

Expert in Materials and Controls

Expert ID: 718005 Massachusetts, USA

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As the former Vice President of Materials and Controls at Texas Instruments, Expert has diversified experience in electronics corrosion prevention, metallurgy, and electronic ceramics and thermostatic bimetal discs. He led the development of unique processes for titanium aluminide thin foil manufacture, specialty ceramics for night vision applications, high-temperature piezoelectric materials for automotive sensors, and ceramic materials for telephone protection applications.

Expert has applied his knowledge of transport properties in solids to the understanding of transport properties in Schottky barriers. This theoretical work was coupled with experimental verification to ensure self-consistency of the models developed. His experimental work involved capacitance measurements at frequencies ranging from 1 Hz to 10 MHz, infrared photoresponse at room temperature, and helium temperature transport properties in the presence (or not) of a magnetic field.

Expert has investigated the influence of many impurities on the resulting growth characteristics of silicon and germanium. This effort resulted in the development of the silicon carbon phase diagram and the successful demonstration of striation effects resulting from the presence of gravity. These efforts were accomplished through the early introduction of spreading resistance probe measurements and the growth and characterization of germanium crystals in space aboard Skylab.


A significant portion of Expert' career has involved leading the development of a low-cost manufacturing process for barium-strontium and lead-strontium titanates. He also pursued the development of high-voltage materials through identifying resistivity, non-uniformity, and control. This was accomplished through the development of spreading resistance measurement techniques and the use of finite element codes that coupled thermal and mechanical behavior.

Expert led an effort toward the successful development of an in-cylinder pressure sensor, a common rail pressure sensor, and a capacitive static pressure sensor. These efforts involved the integration of such technologies as finite element analysis (FEA), piezoelectric materials, and microformed alumina. All sensors were "smart" in the sense that electronic circuits were included in the package to perform linearization and calibration.


Using finite element analysis, Expert has applied his knowledge of silicon growth to the understanding of crystal growth and impurity incorporation in small silicon spheres via thermal and solidification modeling. He also proposed and demonstrated energy-efficient means for melting and processing the spheres.

Over a 20 year period, Expert has conducted numerous design reviews for electromechanical and electronic systems. These reviews were either aimed at assessing the validity of a design, selecting the best design from a set of alternatives, or generating a new design to meet all market requirements.


In an area of secondary expertise, Expert used his knowledge of the uncooled night vision camera system and his experience in patent literature to conduct a worldwide patent search to assess the business opportunity and to analyze the competition's position in this area. Using a computer search, he sifted through 10,000 abstracts to obtain a selection of 200 patents for detailed study.


Expert has developed a material, chemical, thermal, and financial model of a polysilicon manufacturing plant. He used the model to define the optimum operating characteristics to obtain either maximum profit or maximum output.

Front end semiconductor process troubleshootingSemiconductor device designPanel chairman for proposal reviews

Expert may consult nationally and internationally, and is also local to the following cities: Boston, Massachusetts - Worcester, Massachusetts - Springfield, Massachusetts - Lowell, Massachusetts - Cambridge, Massachusetts - Brockton, Massachusetts - New Bedford, Massachusetts - Hartford, Connecticut - Manchester, New Hampshire - Providence, Rhode Island

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Education

Year Degree Subject Institution
Year: 1962 Degree: PhD Subject: Electrical Engineering, Institution: Stanford University
Year: 1959 Degree: Subject: Electronics Engineer, Institution: Ecole Superieure d'Electricite

Work History

Years Employer Title Department Responsibilities
Years: 1996 to Present Employer: Undisclosed Title: Independent Consultant Department: Responsibilities:
Years: 1976 to 1996 Employer: Texas Instruments Title: Vice President of Materials and Controls Department: Responsibilities:
Years: 1971 to 1976 Employer: Texas Instruments Title: Manager, Chemical Plant Operations Department: Responsibilities:
Years: 1969 to 1971 Employer: Texas Instruments Title: Manager, Silicon Crystal Growth Department: Responsibilities:
Years: 1964 to 1969 Employer: Texas Instruments Title: Research Engineer Department: Responsibilities:
Years: 1963 to 1964 Employer: Centre National d'Etudes des Telecommunications Title: Research Engineer Department: Responsibilities:

International Experience

Years Country / Region Summary
Years: 1962 to 1964 Country / Region: France Summary: Gas laser research
Years: 1999 to 2000 Country / Region: Japan Summary: Front End troubleshooting

Career Accomplishments

Associations / Societies
A Fullbright Scholar, Expert is a member of the American Physical Society, IEEE, and Sigma Xi.
Publications and Patents Summary
He has authored 23 technical publications and 17 patents.

Language Skills

Language Proficiency
French
Italian
Spanish

Fields of Expertise

metallurgy, celestite, Schottky barrier diode, semiconductor growth, positive temperature coefficient thermistor, automotive sensor, pressure sensor, pressure transducer, smart sensor, photovoltaic energy system, electronic product design review, night-vision imaging system, process modeling, carbon dioxide sensor, metal-oxide-silicon capacitor, electric motor application, high-purity silicon, semiconductor diode testing, silicon single crystal, position sensor, sensor interface, electric resistivity, silicon sensor, piezoelectric ceramic, thermal modeling, silicon processing, semiconductor wafer processing, atmospheric pressure chemical vapor deposition, degenerate semiconductor, sensor design, infrared imaging application, thermal stress, silicon semiconductor growth, piezoelectric sensor, semiconductor material characterization, sensor calibration, doping agent, semiconductor material processing, electrical dissipation factor, active electronic element, electric current energy, solid-state electronics science, electrical engineering, thermal expansion, positive-type semiconductor material, negative-type semiconductor material, donor impurity, acceptor impurity, microelectronics science, electronic rectifying element, electrical equipment, voltage reference diode, thermal imaging, sensor, semiconductor material, semiconductor diode, pressure measurement, piezoelectricity, piezoelectric transducer, infrared imaging, heat radiation, heat convection, heat conduction, electric resistance, electric reactance, doped semiconductor, semiconductor diffusion, crystal growth, capacitor, capacitive reactance, bimetal, automotive electronics science

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