Expert Details
Optoelectronics, Semiconductors, Microwaves
ID: 715363
Delaware, USA
SEMICONDUCTOR LASER AND LIGHT-EMITTING DIODES (LED). Much of Expert's work has involved the design of specialized laser diodes and LEDs fabricated in III-V semiconductors, including tunable distributed feedback (DFB) lasers. His recent efforts have led to the development of light-emitting and detecting (LEAD) diodes that can function as lasers (or LEDs) when forward-biased and as photodiodes when reverse-biased.
PHOTONICS; OPTOELECTRONICS. Expert's area of expertise extends well beyond integrated optics to the general field of photonics or optoelectronics. He is currently working on electroabsorption modulators and metal-semiconductor-metal (MSM) photodetectors.
SEMICONDUCTOR DEVICES; FIELD-EFFECT TRANSISTOR; ACOUSTOOPIC MODULATOR. In addition to his specialization in photonics, Expert has in-depth experience in the design and fabrication of other semiconductor devices, including microwave field effect transistors, IMPATT diodes, Gunn diodes, Peltier cooling stages, and acousto-optic modulators. He is familiar with semiconductor processing techniques for silicon and III-V materials, including epitaxial growth, diffusion, and ion-implantation doping.
TIME-DOMAIN REFLECTOMETRY. Expert is experienced in the use of mircowave TDR techniques to detect and characterize corrosion in steel bridge support cables and reinforcing rods.
Education
| Year | Degree | Subject | Institution |
|---|---|---|---|
| Year: 1967 | Degree: PhD | Subject: Applied Physics | Institution: Cornell University |
| Year: 1963 | Degree: MS | Subject: Electrical Engineering | Institution: Princeton University |
| Year: 1962 | Degree: BS | Subject: Electrical Engineering | Institution: Drexel University |
Work History
| Years | Employer | Title | Department |
|---|---|---|---|
| Years: 1976 to Present | Employer: Undisclosed | Title: Professor, | Department: |
Responsibilities:Research, teaching, project management |
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| Years | Employer | Title | Department |
| Years: 1984 to 1985 | Employer: Electrical Engineering, University of Delaware | Title: Acting Chairperson, | Department: |
Responsibilities:Department management, research, teaching |
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| Years | Employer | Title | Department |
| Years: 1967 to 1976 | Employer: Hughes Research Laboratories | Title: Member, Tech. Staff, | Department: |
Responsibilities:Ion implantation doping research, microwave and optoelectronic devices development. |
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| Years | Employer | Title | Department |
| Years: 1975 to 1976 | Employer: Electrical Engineering, USC | Title: Instructor, | Department: |
Responsibilities:Teaching |
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| Years | Employer | Title | Department |
| Years: 1969 to 1976 | Employer: Electrical Engineering, UCLA | Title: Instructor, | Department: |
Responsibilities:Teaching |
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Career Accomplishments
| Associations / Societies |
|---|
| IEEE (Fellow), OSA, SPIE |
| Publications and Patents Summary |
|---|
| He has over 100 publications,18 patents and 2 books in the area of semiconductor optoelectronic and microwave devices. |
Fields of Expertise
acoustooptic modulator, electrooptics, fiber optics, field-effect transistor, integrated optics, integrated optoelectronics science, light-emitting diode, metal semiconductor field-effect transistor, optical fiber, optoelectronics science, photon, photonics technology, semiconductor device, semiconductor laser, time-domain reflectometry, light emitter, light-emitting diode switching speed, light-emitting diode rise time, electromagnetic radiation detection, aluminum gallium arsenide, discrete semiconductor device, metal-semiconductor-metal photodetector, lithium niobate, acoustooptic modulation, epitaxial silicon, III-V semiconductor material, electrooptic device, semiconductor material processing, molecular beam epitaxy, ion implantation, optical communication, electromagnetic radiation, semiconductor device analysis, photoconductive material, acoustooptics, gallium arsenide semiconductor, Gunn effect, photoconductive cell, Peltier effect, microwave frequency, microwave device, silicon diode, impact avalanche and transit time diode, trapped plasma avalanche transit time diode, photoelectric cell, optical lens, semiconductor ion implantation, waveguide, transit-time device, transistor, semiconductor material, semiconductor doping, semiconductor diode, radio frequency, pulsed laser, phototransistor, photosensor, photodiode, optics, optical waveguide, optical sensor, optical material, optical instrument, optical filter, optical element, optical coupling, microwave integrated circuit, laser, injection laser, infrared detector, Gunn oscillator, Gunn diode, Gunn device, gallium arsenide laser, field-effect device, optical fiber sensor, solid electric property, semiconductor diffusion, bipolar transistor, avalanche photodiode, avalanche diode