Expert in Process Science, Process Equipment and Thin Films Material Characterization for PVD Poly-Crystal (AlN, AlScN, Mo, Ti, Al), CVD Epitaxial (Si, SiGe, GaAs, AlGaAs) and PECVD Amorphous Dielectrics.
Expert ID: 738124 Arizona, USA
- EE with more than 20 years of semiconductor experience including Motorola and Intel, working on compound materials, epitaxial growth, PVD thin film deposition, materials characterization, and process optimization.
- Device and process improvements.
- Measurement and characterization equipment building, hardware and software setup. Hands-on metrology equipment (X-ray diffraction, ECV, Hall measurement, Auger, SEM, EDX, AFM, SIMS, ), electronic test equipment
- ASQ Certified Reliability Engineering with experience in CMOS and PVD reliability extensively gained at Motorola, Boeing, and Intel.
- Capable of semiconductor and vacuum equipment sustaining, and troubleshooting, including all, Tegal Endeavor, Eclipse PVD, ASM EPSILON and AMAT P5000, Centura, Endura, and Emcore/Veeco E-450 epi reactors
- Active player in 65nm and 45nm process technology introduction and front-end process integration,
- Extensively used DOE, SPC, and process capability improvement. Outstanding written and presentation skills. Meticulous documentation ability.
- Strong team player. Ability to think outside the box to apply past experiences to resolve issues.
Strong expertise with process development, process equipment, and thin-film material characterization for PVD poly-crystal (AlN, AlScN, Mo, Ti, Al), CVD epitaxial (Si, SiGe, GaAs, AlGaAs) and low-temperature PECVD amorphous SiO2. The work on process development, technology, and high-volume production was strongly supported by scientific background with two doctors of philosophy degrees: A ph.D. in electrical engineering from Arizona State University with a thesis defended in 2005, and Ph.D. in physics from Sofia University “St. Kliment Ohridski” with thesis defended in 1997. As a Lead Process Development Engineer at OEM group at Gilbert, Arizona (currently Plasma-Therm and Shallback) the expertise was built in PVD and CVD thin-film process development and characterization. The process equipment used was the Endeavor and Eclipse PVD systems to do process development of poly-crystalline piezo- materials deposition (AlN, AlScN) and metals (Mo, Ti, Al) for MEMS BAW and SAW filters and thin-film energy harvesting devices. The developed films were characterized by using XRD (Pilips MRD), AFM (Inova/Veeco), including stress and reflectivity measurement. The low-temperature P5000 PECVD SiO2 process was developed for hard and elastic low-temperature SiO2 as a top layer in surface acoustic devices (SAW) based on LiNd substrate. The work at Polar Semiconductor (Minneapolis) as a Lead Epitaxy Process Engineer was focused on epitaxial growth and characterization and process optimization for Si BiCMOS technology. The high volume manufacturing and process optimization were performed with ASM-EPSILON, AMAT CENTURA, and 150mm 7700 AMC for Si epitaxial growth. At Intel, the work on SiGe selective epitaxial growth and characterization was performed. The process optimization and troubleshooting was done with 300mm ASM and AMAT epi reactors. In line, epitaxial materials characterization was utilized with the BEDE Matrix XDR system and SIMS (CEMECA) systems. The expertise in development work with III-V and II-IV materials was obtained as a senior process engineer at Motorola (HEMT devices), product engineer at Boeing -Spectrolab (high-efficiency solar cells), and when working on the Ph.D. thesis at Arizona State University.
|Year: 2005||Degree: Ph.D.||Subject: Investigation of Extended Defects in Silicon Carbide and Gallium Nitride by Scanning Techniques||Institution: Arizona State University|
|Year: 1997||Degree: PhD||Subject: Particle Beam Sources||Institution: Sofia University "St. Kliment Ohridski"|
|Year: 1981||Degree: MS.||Subject: Atomic Physics||Institution: Sofia University "St. Kliment Ohridski"|
|Years: 2011 to 2020||Employer: OEM Group (Currently sold to Plasma-Therm and Shallback)||Title: Lead Process Eneer||Department: Process Development|
Responsibilities:Responsible for PVD and CVD thin film deposition and characterization. Strong background in poly-crystalline piezo- materials deposition ( AlN, AlScN) for FBAR, SMR and energy harvesting devices. Poly-crystalline metals (Mo, Ti, Al) thin films deposition for MEMS (BAW, SAW). Film characterization using XRD(Pilips MRD), AFM (Inova/Veeco), stress and reflectivity measurement to develop the best crystal orientation. P5000 CVD and PECVD process development for hard and high elasticity low temperature SiO2.
|Years: 2008 to 2011||Employer: Polar Semiconductor (SANKEN Inc.)||Title: Lead Process Engineer||Department: Epitaxy|
Responsibilities:Responsible for epitaxial growth and characterization and process optimization in Si BiCMOS technology. Strong experience with 200mm AMAT CENTURA ASM-EPSILON and 150mm 7700 AMC epitaxial growth, machine operation and hands on materials characterization. Experience in GSD Implanter sustaining and troubleshooting. Epitaxial layer defects minimization and device troubleshooting for epi and implant issues and device reliability performance.
|Years: 2005 to 2008||Employer: Intel Co.||Title: Senior Process Engineer||Department: Epitaxy|
Responsibilities:Responsible for SiGe selective eitaxial growth and characterization. Experienced in FA and process troubleshooting. Strongly involved in tools installation, qualification, reliability, preventive maintenance and troubleshooting, Epitaxilal deposition with 300mm ASM and AMAT epi reactors. Epitaxy analyses with BEDE Matrix XDR system, SIMS (CEMECA) system.
|Years: 2003 to 2004||Employer: Boeing - Spectrolab||Title: Senior Product Engineer||Department: Product Engineering|
Responsibilities:Product engineer responsible for compound solar cells space application program. Products reliability troubleshooting related to the epitaxy and metal issues. Strong experience in root cause investigation using destructive and nondestructive physical analyses (XRD (reciprocal space mapping), SEM (JEOL, Hitachi), AES, EDX, AFM, FTIR, and SPM.
|Years: 2002 to 2004||Employer: ASU||Title: Research Associate||Department:|
Responsibilities:Research work on wide bandgap compound semiconductors (GaN, SiC). Study in 4H -SiC process generated defects due to the thermal oxidation. Failure analyses of high voltage SiC Schottky diodes. Research on 3C double layer stacking faults as a quantum wells in 4H-SiC matrix. Study and characterization of materials and device defects using different techniques: electrical (C/V, I/V), optical, SEM/EDX, surface (AFM, EFM, Kelvin Probe), Auger electron spectroscopy (AES), electron beam induced current (EBIC), electro-luminescence (EL), cathodo-luminescence (CL) techniques. Knowledge in visual studio C++ programming of (*.dll) procedures to utilize NI data acquisition capability.
|Years: 1997 to 2002||Employer: Motorola||Title: Senior Process Engineer||Department: Compound materials epitaxy in CS 1|
Responsibilities:Responsible for compound epitaxial growth, and material characterization for device/process/material correlation. Experienced in epitaxial growth of HEMPT devices utilizing ASM and Emcore E-450 Turbo-Disk epi reactors. Strong experience in device-process correlation and troubleshooting. Build optical tools for photoluminescence (PL) and photoreflectivity (PR) compound epitaxial materials characterization. Strong experience with industrial semiconductor materials characterization tools: SEM, AFM, CV (HP), eddy current resistivity (Lehighton), photoluminescence (Philips PL), X-ray diffraction (Philips DCD2), TEM, AES, SIMS, RBS. Optimization of the top layer (multiple quantum well structure) of pHEMT to improve the contact resistance.
|Associations / Societies|
|Licenses / Certifications|
|Certified Reliability Engineer, American Society for Quality (ASQ)|
|Awards / Recognition|
|Received Motorola Engineering Award for “ System for nondestructive characterization and device-material correlation of pHEMT epi1”.|
|Publications and Patents Summary|
1 PL System for Nondestructive Characterization - based on Coherent ion laser, ARC 500 Spectrometer, and Keithley 2600. Data acquisition through NI I/O board and LABVIEW software. (Motorola)
2 PR System for AlGaAs Nondestructive Characterization based on HeNe laser, ARC 250 monochromator, Keithley 2600 multy meter (PDA6424 photodiode preamplifier), data acquisition by NI I/O board and LABVIEW software. (Motorola)
3 System for CL Spectrometry and Monochromatic Imaging - based on Oxford CL302 attachment to the JEOL 840 SEM, Instruments S.A. HR320 spectrometer, RCA PMT and Tracor ADC system. Data acquisition by NI I/O (MIO-16E4) board and NI DAQ software through dynamic link library (visual studio C++ programming) (ASU)
4 System for Conductive AFM measurements based on DI Multimode IIIa SPM, and new low noise pre-amplifier to detect the pA tip-surface current (ASU)
5 Thermal stress and reliability study of ultra-efficient triple junction solar cell. Top (AlInAs) window relaxation. (Spectrolab)