Intellex Acquires Expert by Big Village

We're thrilled to announce that Intellex has acquired Expert by Big Village, effective March 22, 2024. This strategic move enhances our capabilities and strengthens our commitment to delivering exceptional solutions to our customers.

Stay tuned for more updates on how this acquisition will benefit our clients and experts.

For inquiries or more information, please contact us at info@intellex.com.

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Expert Details

Radiation Effects in Microelectronics, Radiation Hardness Assurance, Test Planning, Data Analysis

ID: 728124 New Mexico, USA

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Expert is a recognized expert in testing, modeling, and analysis of radiation effects in microelectronics. His expertise includes displacement damage from neutrons and protons, ionizing radation effects from gammas, electrons and protons, prompt dose rate effects from x-rays and single event effects from protons and heavy ions. He is an expert in radiation effects in bipolar devices and circuits, CMOS microcircuits, MOS power devices and JFETs. He is an internationally known expert in enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits. He has presented short course lectures on radiation hardness assurance, single event transient effects in linear circuits, ionzing radiation effects in bipolar technologies, and general radiation effects in microcircuits. Expert is an expert in radiation effects testing of microelectronics at radiation facilites including Co-60, electron LINACS, flash x-rays, fast burst nuclear reactors, proton accelerators and heavy ion accelerators. Expert has over 130 refereed journal publications in these areas and has been awarded numerous outstanding paper awards at conferences. He has authored several invited papers and book chapters. Most of his contract work has been for government agencies and system contractors. He is currently the primary hardness assurance consultant to the Defense Supply Center for radiation qualified electronics and provides technical support to the Defense Threat Reduction Agency.

He consulted to DPACI on developing a hardness assurance programHe consulted to Aeroflex Plainview providing a short course on radiation effects in microelectronicsHe consulted to Loral Space Systems on low dose rate effects in linear bipolar circuits

Education

Year Degree Subject Institution
Year: 1965 Degree: BS Subject: Physics Institution: Indiana University

Work History

Years Employer Title Department
Years: 1993 to Present Employer: Undisclosed Title: President Department:
Responsibilities:
He provides technical support to the Defense Threat Reduction Agency in the form of research in total dose effects in bipolar technologies, radiation hardness assurance expertise to Defense Supply Center and support of radiation effects conferences and hardness assurance activities (JEDEC, ASTM and SPWG).
Years Employer Title Department
Years: 1979 to 1993 Employer: Mission Research Corporation Title: Division Manager and Chief Scientist Department: Microelectronics
Responsibilities:
He was Division Manager and later Chief Scientist of a division of 15-20 engineers and scientists doing research in radiation effects. He was the program manager on several large government task order contracts. He also perfromed research on several of the task orders.
Years Employer Title Department
Years: 1977 to 1979 Employer: BDM Corp. Title: Senior engineer/Division Manager Department: Electronics
Responsibilities:
He was program manager on several government contracts doing research in radiation effects and became manager of a division of 20-30 engineers.
Years Employer Title Department
Years: 1966 to 1977 Employer: Naval Ammunition Depot Crane Title: Engineer/Section Leader Department:
Responsibilities:
He started by writing specifications for semiconductor devices for a Navy system. He moved to the radiation effects section and performed radiation effects testing of semiconductors for a Navy missile system while stationed at White Sands Missile Range, NM. He later became the section manager.

Government Experience

Years Agency Role Description
Years: 1979 to Present Agency: Defense Threat Reduction Agency Role: Contractor Description: He works on many research programs on radiation effects in microelectronics and provides technical support to the DTRA Radiation Hardened Microelectronics and hardness assurance programs
Years: 1977 to 1979 Agency: Air Force Research Lab Role: Contractor Description: He worked on a program to investigate hardness assurance techniques for total dose
Years: 1966 to 1977 Agency: Naval Ammunition Depot Role: Civil service employee Description: He performed radiation effects testing of semiconductor devices and circuits for a Navy missile system

Career Accomplishments

Associations / Societies
IEEE Fellow
Awards / Recognition
Peter H. Haas Award
Publications and Patents Summary
He has over 130 publications, four book chapters, four invited papers.

Additional Experience

Training / Seminars
He developed and gave a one day short course in radiation effects at the Commercialization of Military ans Space Electronics (1999). He has given short courses on hardness assurance at the Nuclear and Space Radiation Effects Conference (2004) and at Vanderbilt University (2005). He gave a short course on Single Event Transients at the Radiation Effects on Components and Systems in France (2007)
Vendor Selection
He has worked with radiation effects engineers at Intersil, Honeywell, BAE, Aeroflex, Texas Instruments, National Semiconductor, Analog Devices, Crane Interpoint, and International Rectifier.

Fields of Expertise

bipolar transistor beta (Hfe) degradation, cobalt-60, extraterrestrial radiation, gamma radiation, ionizing radiation, irradiation, metal-oxide semiconductor device radiation effect, neutron, neutron irradiation, nuclear radiation, photon, prompt neutron, proton, radiation damage, radiation dose, radiation effect, radiation testing, heavy ion, radiation hardness, gate oxide, cosmic radiation, dosimeter, electronic equipment failure analysis, power metal-oxide semiconductor field effect transistor, complementary metal-oxide semiconductor device, complementary metal-oxide semiconductor integrated circuit, fast-neutron nuclear reactor, space environment, high-energy radiation, metal-oxide semiconductor device, microelectronics science, silicon, electronics testing, dosimetry, bipolar transistor

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