Expert Details

Expert in Semiconductor Radiation, Relative Humidity, Gas Flow, Differential Pressure Sensors

Expert ID: 729707 Switzerland

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Expert received his M.Sc. in Physics from the Technical Institute of Zurich (ETHZ in German) in 2002 and his Ph.D. in Physics about semiconductor silicon radiation sensors from Helsinki University in 2006. He spent his Ph.D. studies at CERN, Geneva, Switzerland as a doctoral student of the CERN funding programme. The silicon radiation sensor he contributed to develop is currently in use at the Large Hadron Collider at CERN and allows fast (25 ns time resolution) and spatially accurate (<20 um spatial resolution) radiation detection with a radiation hardness up to an integrated flux of 10e14 1 MeV neutron equivalent/cm2, while keeping the dimensions of the sensors compact (a few cm2 of surface and a total thickness of a few cm) His main task consisted in reducing the inactive area at the sensor mechanical edge.

Expert worked between 2007 and 2009 for Sensirion AG, a company manufacturing relative humidity, gas flow and differential pressure silicon MEMS devices as a Quality Engineer in Staefa, Switzerland. His main task consisted in investigating internal and customer's defective MEMS devices, including root cause determination of defective devices and implementation of corrective and preventive actions to the production site of the company. His work implied good understanding of sensor design and mass manufacturing processes. He contributed to yield improvement in the internal high volume production of MEMS sensors and extended the capabilities of the failure analysis tools
of the company. He also helped to make the complain handling system of the company compliant for the high demands of the automotive market.

Expert worked between 2009 and 2010 as the CEO of Sensor Center Ltd in Vantaa, Finland. The company provides technical consutling services for promising start-up companies. His main tasks consisted in fund rising activities and screening of promising concepts of sensors mostly based on silicon technology.He contributed to the creation of the first start-up company supported by Sensor Center.


Year Degree Subject Institution
Year: 2006 Degree: Ph.D. Subject: Physics Institution: Helsinki University
Year: 2002 Degree: M. Sc. Subject: Physics Institution: Swiss Federal Insitute of Technology Zurich (ETHZ)
Year: 1996 Degree: Baccalaureate Subject: Latin, Ancient Greek and Mathematics Institution: Gymnase du Bugnon, Lausanne, Switzerland

Work History

Years Employer Title Department Responsibilities
Years: 2011 to Present Employer: Undisclosed Title: Department Head of Supplier Quality Department: Quality Management Responsibilities: Definition of the company's strategy for supplier quality management
Operational coordination of supplier quality issues for parts of luxury watches
Years: 2010 to 2011 Employer: IWC Schaffhausen Title: Supplier Quality Manager Department: Quality Responsibilities: Responsible for product quality of suppliers.
Years: 2009 to 2010 Employer: Sensor Center Ltd Title: CEO Department: Managment Responsibilities: Fund raising; Start-up creation.
Years: 2007 to 2009 Employer: Sensirion AG Title: Quality Engineer Department: Quality Responsibilities: Yield improvement of mass production of silicon sensors;
Technical investigations for world wide customer returns.
Years: 2002 to 2006 Employer: CERN, Geneva Title: Doctoral Student Department: PH (Physics) Responsibilities: Development of active edge silicon sensors;
Integration of silicon sensors to highly complex readout and mechanical system.

International Experience

Years Country / Region Summary
Years: 2009 to 2010 Country / Region: Finland Summary: Expert was CEO st Sensor Center Ltd.

Career Accomplishments

Professional Appointments
Publications and Patents Summary
Expert has more than 6 publications on silicon radiation sensors.

Language Skills

Language Proficiency
French Expert level
English Expert level
Finnish Expert level

Fields of Expertise

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