Expert Details

Expert in Semiconductor Materials Characterization Thin Film Deposition

Expert ID: 723141 New York, USA

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He has extensive experience, over 20 yrs, in the field of epitaxial deposition of III-V semiconductor materials for opto-electronic devices (InGaAsP/InGaAlAs/InP and AlGaAs/InGaP/GaAs based materials). This includes the growth of high-speed bipolar transitors, phototransistors, lasers, pin and avalanche high-speed photodetectors. He has operated a variety of commercial equipment including MBE systems from Vacuum Generators, Varian, and Riber and MOCVD systems from Aixtron. He has experience with many types of sources including standard effusion cells, solid and gas source crackers. In addition to these commercial systems he also has designed and built a compact gas source MBE system for the growth of InP based III-V materials. Much of his work relating to epitaxial growth has been published in peer-reviewed journals such as the Journal of Crystal Growth and Applied Physics Letters. He was one of the first researchers to develop the use of carbontetrabromide for carbon p-type doping in InGaAs materials that has been essential for the development and reliability of high-speed bipolar transistors.

He has over 25 years of experience with vacuum systems from basic rough pumped deposition chambers to ultrahigh vacuum all metal sealed systems reaching base vacuum pressures of 1x10-11 torr. In the course of his research he has acquired extensive expertise with many types of pumping systems including Oil & Mercury Diffusion, Turbo, Ion, Cryo, Sublimation, Roots Blowers, Rotary vane, Scroll, Diaphragm, and Venturi pumps. This also includes extensive work with various vacuum measurement techniques such as Ion, Cold cathode, Manometers, Strain, Pirani, and RGA. In the course of his research he has designed, built, and operated vacuum systems for eptitaxial and thin film deposition of state of the art opto-electornic materials and high temperature, high vacuum in-situ x-ray analysis. These systems required the use of many different high temperature materials (e.g. aluminum oxide, pyrolitic boron nitride, tantulum, molybdenum, and tungsten) compatible with a high temperature and high vacuum environment. He has worked with many different vacuum deposition techniques, which include thermal (both resistive and e-beam), sputtering, PECVD, MBE, and MOCVD. He has worked with numerous systems requiring the pumping of toxic and flammable gasses such as phosphine, arsine, silane, hydrogen, oxygen, and pyrophroric metalorganics and has acquired extensive experience with all of the associated safety issues in the use of these hazardous gasses including storage, monitoring, personal protective equipment such as SCBA's, emergency response procedures, and waste removal requirements and procedures.

He has many years of experience in the field of x-ray diffraction starting from his thesis work in dynamical x-ray diffraction in fulfillment of a Master Degree from the Polytechnic Institute of New York. He has experience with numerous diffraction techniques including powder, back reflection Laue, high resolution single crystal, double crystal, dynamical and energy dispersive techniques using both sealed tube and rotating anode x-ray sources. In the course of his research he has investigated many different materials including but not limited to various thin film metal contacts, silicides, oxides, superconductors, and III-V semiconductors. He has designed and built numerous custom x-ray systems for the study of both thin film and single crystal structures. The results of these studies have been published in peer-reviewed journals such as JAP and APL. He has developed various C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters.

He provides consulting services for the High Speed Electronics group at Bell Labs, Murray Hill, NJ. This includes consulting on new epitaxial growth techniques and materials for high speed InP based electronics. He also provides support for upgrading and maintaining their semiconductor growth system which includes the vacuum system, toxic gas handling, safety and control systems.

Expert may consult nationally and internationally, and is also local to the following cities: New York, New York - Yonkers, New York - Newark, New Jersey - Jersey City, New Jersey - Paterson, New Jersey - Elizabeth, New Jersey - Bridgeport, Connecticut - New Haven, Connecticut - Stamford, Connecticut - Philadelphia, Pennsylvania

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Year Degree Subject Institution
Year: 1979 Degree: MS Subject: Physics Institution: Polytechnic Institure of New York
Year: 1977 Degree: BS Subject: Physics Institution: Polytechnic Institute of New York

Work History

Years Employer Title Department Responsibilities
Years: 2001 to Present Employer: Undisclosed Title: Member of Technical Sales Department: Growth and Characterization Responsibilities: He manages a production MOCVD reactor for the development & production of optical devices (lasers and detectors) for telecom applications. This includes all aspects of system operation and coordination between various projects. He is responsible for the materials development and mask design for various foundry and government contracts. He also handles all purchasing for the Growth & Characterization grouup.
He managed the design and construction of a new 10,000ft2 semiconductor clean room facility for III-V growth and processing, including all hazardous gas safety systems, chemical waste treatment systems, compliance with local and national fire and safety codes, and installation of all growth and characterization equiqment. Responsible for coordinating with general contractor from initial concept to commisioning/certification of clean room.
Years: 1982 to 2001 Employer: Lucent Technologies/AT&T Bell Labs Title: Member of Technical Staff Department: Physical Sciences Research Responsibilities: He carried out research and development in advanced semiconductor opto-electronic devices and processing of semiconductor materials. He published many papers in peer reviewed journals and given presentations at numerious industry conferences.
He was responsible for managing the epitaxial growth program for the development of high speed Indium Phosphide based materials/devices using the Molecular Beam Epitaxy growth method. Managed and coordinated development lab for thin film deposition of various metals, metal oxides, oxides, and carbon films using e-beam, sputter,and thermal deposition techniques. He has designed and built a variety of UHV compatible high temperature cells used in various film deposition applications. He developed a number of Fortran and C based software applications utilizing Fourier analysis to simulate x-ray diffraction data and extract structural parameters.
Years: 1978 to 1982 Employer: AT&T Bell Labs Title: Senior Technical Associate Department: Physical Sciences Reasearch Responsibilities: He was responsible for the operation of a research and development thin film deposition lab. This included the designing, construction, and operation various thin film deposition systems including e-beam, thermal, and sputter systems. He has worked with the deposition of many different materials systems including Au-Al, Cu-Al, PbO, and type A15 superconductors.

Government Experience

Years Agency Role Description
Years: 2001 to Present Agency: DARPA Role: Team member Description: New materials and device development for DARPA contract.

Career Accomplishments

Associations / Societies
Publications and Patents Summary
He has more than 50 publications and 6 patents

Fields of Expertise

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